- 您现在的位置：买卖IC网 > Sheet目录457 > IXFR36N60P (IXYS)MOSFET N-CH 600V 20A ISOPLUS247
PolarHV TM HiPerFET
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
IXFR 36N60P
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
600
20
200
200
V
A
m ?
ns
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
ISOPLUS247 (IXFR)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
600
600
V
V
E153432
V GSS
V GSM
Continuous
Transient
± 30
± 40
V
V
G
D
S
Isolated Tab
I D25
T C = 25 ° C
20
A
I DM
I AR
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
80
36
A
A
G = Gate
S = Source
D
= Drain
E AR
E AS
T C = 25 ° C
T C = 25 ° C
50
1.5
mJ
J
Silicon chip on Direct-Copper-Bond
International standard package
Fast recovery diode
Unclamped Inductive Switching (UIS)
dv/dt
P D
T J
T JM
T stg
T L
T SOLD
V ISOL
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
50/60 Hz, RMS, 1 minute
20
208
-55 ... +150
150
-55 ... +150
300
260
2500
V/ns
° C
° C
° C
° C
° C
° C
V~
Features
l
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
l
l
rated
F C
Weight
Mounting force
20..120/4.6..27
5
N/lb
g
l
Low package inductance
- easy to drive and to protect
Symbol Test Conditions
Characteristic Values
Advantages
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
Min. Typ. Max.
600
V
l
l
Easy to mount
Space savings
V GS(th)
V DS = V GS , I D = 4 mA
3.0
5.0
V
l
High power density
I GSS
V GS = ± 30 V, V DS = 0 V
± 100
nA
I DSS
V DS = V DSS
V GS = 0 V
T J = 125 ° C
25
250
μ A
μ A
R DS(on)
V GS = 10 V, I D = I T (note 1)
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
200
m ?
? 2006 IXYS All rights reserved
DS99395E(03/06)
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXFR40N90P
MOSFET N-CH ISOPLUS247
IXFR44N50P
MOSFET N-CH 500V 24A ISOPLUS247
IXFR44N50Q3
MOSFET N-CH 500V 25A ISOPLUS247
IXFR44N60
MOSFET N-CH 600V 38A ISOPLUS247
IXFR44N80P
MOSFET N-CH 800V 25A ISOPLUS247
IXFR48N50Q
MOSFET N-CH 500V 40A ISOPLUS247
IXFR48N60P
MOSFET N-CH 600V 32A ISOPLUS247
IXFR48N60Q3
MOSFET N-CH 600V 32A ISOPLUS247
相关代理商/技术参数
IXFR38N80Q2
功能描述:MOSFET 38 Amps 800V 0.24 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR38N80Q2_08
制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFET Q2-Class
IXFR40N50Q2
功能描述:MOSFET 500V 30A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR40N50Q2_08
制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFET Q2-Class
IXFR40N90P
功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR44N50P
功能描述:MOSFET 500V 44A
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR44N50Q
功能描述:MOSFET 34 Amps 500V 0.12 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR44N50Q_03
制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs ISOPLUS247, Q-Class